DSC9G02 Datasheet. Specs and Replacement
Type Designator: DSC9G02
SMD Transistor Code: C5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN: 65
Package: SSMINI3-F3-B
DSC9G02 Substitution
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DSC9G02 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSC9G02 Silicon NPN epitaxial planar type For high-frequency amplification DSC5G02 in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini3-F3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒
Detailed specifications: DSC8004, DSC8102, DSC8505, DSC8P01, DSC8Q01, DSC9001, DSC9A01, DSC9F01, BC549, DSCF001, DSCQ001, DSS4160DS, DSS4160T, DSS5160T, DT430, L2SA1235FLT1G, L2SA1577PT1G
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