All Transistors. DSC9G02 Datasheet

 

DSC9G02 Datasheet and Replacement


   Type Designator: DSC9G02
   SMD Transistor Code: C5
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: SSMINI3-F3-B
 

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DSC9G02 Datasheet (PDF)

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DSC9G02

This product complies with the RoHS Directive (EU 2002/95/EC).DSC9G02Silicon NPN epitaxial planar typeFor high-frequency amplificationDSC5G02 in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini3-F3-B Contributes to miniaturization of sets, reduction of component c

Datasheet: DSC8004 , DSC8102 , DSC8505 , DSC8P01 , DSC8Q01 , DSC9001 , DSC9A01 , DSC9F01 , 2222A , DSCF001 , DSCQ001 , DSS4160DS , DSS4160T , DSS5160T , DT430 , L2SA1235FLT1G , L2SA1577PT1G .

History: BUW42AP | 50DA045D | 4NU74 | CSC3930C | 2SC3934

Keywords - DSC9G02 transistor datasheet

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