DSCQ001 Datasheet. Specs and Replacement
Type Designator: DSCQ001
SMD Transistor Code: C1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: USSMINI3-F1-B
DSCQ001 Substitution
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DSCQ001 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSCQ001 Silicon NPN epitaxial planar type For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu... See More ⇒
Detailed specifications: DSC8505, DSC8P01, DSC8Q01, DSC9001, DSC9A01, DSC9F01, DSC9G02, DSCF001, 2SA1015, DSS4160DS, DSS4160T, DSS5160T, DT430, L2SA1235FLT1G, L2SA1577PT1G, FMBS2383, FMBT5401LG
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