DSCQ001 Datasheet and Replacement
Type Designator: DSCQ001
SMD Transistor Code: C1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: USSMINI3-F1-B
DSCQ001 Substitution
DSCQ001 Datasheet (PDF)
dscq001.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DSCQ001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSAQ001DSC3001 in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
Datasheet: DSC8505 , DSC8P01 , DSC8Q01 , DSC9001 , DSC9A01 , DSC9F01 , DSC9G02 , DSCF001 , 2SC2240 , DSS4160DS , DSS4160T , DSS5160T , DT430 , L2SA1235FLT1G , L2SA1577PT1G , FMBS2383 , FMBT5401LG .
History: D72F5T2 | MJE13003M7
Keywords - DSCQ001 transistor datasheet
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History: D72F5T2 | MJE13003M7



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