All Transistors. DSCQ001 Datasheet

 

DSCQ001 Datasheet, Equivalent, Cross Reference Search

Type Designator: DSCQ001

SMD Transistor Code: C1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 210

Noise Figure, dB: -

Package: USSMini3-F1-B

DSCQ001 Transistor Equivalent Substitute - Cross-Reference Search

 

DSCQ001 Datasheet (PDF)

1.1. dscq001.pdf Size:447K _upd

DSCQ001
DSCQ001

This product complies with the RoHS Directive (EU 2002/95/EC). DSCQ001 Silicon NPN epitaxial planar type For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package  Features  Package  High forward current transfer ratio hFE with excellent linearity  Code  Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B  Contributes to miniatu

Datasheet: DSC8505 , DSC8P01 , DSC8Q01 , DSC9001 , DSC9A01 , DSC9F01 , DSC9G02 , DSCF001 , 2SC828 , DSS4160DS , DSS4160T , DSS5160T , DT430 , L2SA1235FLT1G , L2SA1577PT1G , FMBS2383 , FMBT5401LG .

 


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