ETF81-050 Datasheet. Specs and Replacement

Type Designator: ETF81-050  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: M101

 ETF81-050 Substitution

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ETF81-050 datasheet

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ETF81-050

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Detailed specifications: EMX52, EMY1, EMZ1FHA, EMZ2, EMZ2FHA, EMZ51, EMZ52, EMZ7, TIP3055, ETG81-050A, ETL81-050, ETN35-030, F8050HPLG, F8050HQLG, FMB2907A, EMT52, EMX18

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