All Transistors. ETF81-050 Datasheet

 

ETF81-050 Datasheet and Replacement


   Type Designator: ETF81-050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M101
 

 ETF81-050 Substitution

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ETF81-050 Datasheet (PDF)

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ETF81-050

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Datasheet: EMX52 , EMY1 , EMZ1FHA , EMZ2 , EMZ2FHA , EMZ51 , EMZ52 , EMZ7 , 13009 , ETG81-050A , ETL81-050 , ETN35-030 , F8050HPLG , F8050HQLG , FMB2907A , EMT52 , EMX18 .

History: ED1601 | EMZ2 | 2SB452A | 2N1131-46

Keywords - ETF81-050 transistor datasheet

 ETF81-050 cross reference
 ETF81-050 equivalent finder
 ETF81-050 lookup
 ETF81-050 substitution
 ETF81-050 replacement

 

 
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