ETF81-050 Datasheet and Replacement
Type Designator: ETF81-050
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M101
ETF81-050 Substitution
ETF81-050 Datasheet (PDF)
etf81-050.pdf

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Datasheet: EMX52 , EMY1 , EMZ1FHA , EMZ2 , EMZ2FHA , EMZ51 , EMZ52 , EMZ7 , 13009 , ETG81-050A , ETL81-050 , ETN35-030 , F8050HPLG , F8050HQLG , FMB2907A , EMT52 , EMX18 .
History: ED1601 | EMZ2 | 2SB452A | 2N1131-46
Keywords - ETF81-050 transistor datasheet
ETF81-050 cross reference
ETF81-050 equivalent finder
ETF81-050 lookup
ETF81-050 substitution
ETF81-050 replacement
History: ED1601 | EMZ2 | 2SB452A | 2N1131-46



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