ETN35-030 Datasheet. Specs and Replacement

Type Designator: ETN35-030  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1500 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 300 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: BBTIII

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ETN35-030 datasheet

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ETN35-030

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Detailed specifications: EMZ2, EMZ2FHA, EMZ51, EMZ52, EMZ7, ETF81-050, ETG81-050A, ETL81-050, TIP42C, F8050HPLG, F8050HQLG, FMB2907A, EMT52, EMX18, EMX1DXV6T1G, EMX1DXV6T5G, EMX1FHA

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