DD05 Datasheet, Equivalent, Cross Reference Search

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DD05NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class: JP, JT, JCT, GS, G,

March 2010FDD050N03BN-Channel PowerTrench MOSFET 30V, 90A, 5mFeatures Description RDS(on) = 3.7m ( Typ.)@ VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 Dimensions (Unit : mm) Structure Silicon N-channel CPT3MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate)(2)Collector(Drain)(3)Emitter(Source) Application Switching Packaging specifications Equivalent Circuit Package

NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

GreenProductSDU/D05N04aS mHop Microelectronics C orp.Ver 1.2N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.400V 4A 2.1 @ VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING INFORMATI

GreenProduct SDU/D05N70aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 5A 1.6 @ VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERIN

3DD05(3DF05) NPN A B C D E F G PCM Tc=75 5 W ICM 0.7 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=5mA 80 150 200 250 350 450 600 V V(BR)CEO ICE=5mA 50 110 150 200 250 300 400 V V(BR)EBO IEB=1mA 6.0 V A-D

3DD05T(DD05T) NPN PCM TC=75 30 W ICM 6 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.0 mA ICEO VCE=50V 1.0 mA IEBO VEB=4V 1.0 mA VBEsat

3DD05T(DD05T) NPN PCM TC=75 30 W ICM 6 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.0 mA ICEO VCE=50V 1.0 mA IEBO VEB=4V 1.0 mA VBEsat

isc N-Channel MOSFET Transistor FDD050N03BFEATURESDrain Current : I =90A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid