All Transistors. DMBT5551 Datasheet

 

DMBT5551 Datasheet and Replacement


   Type Designator: DMBT5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-23
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DMBT5551 Datasheet (PDF)

 ..1. Size:128K  dc components
 dmbt5551.pdf pdf_icon

DMBT5551

DC COMPONENTS CO., LTD.DMBT5551DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).

 9.1. Size:125K  dc components
 dmbt5401.pdf pdf_icon

DMBT5551

DC COMPONENTS CO., LTD.DMBT5401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT3906HE3 | 2N2874 | 2N332A | 2SB744A | BC847RA | BDW24 | KT657B-2

Keywords - DMBT5551 transistor datasheet

 DMBT5551 cross reference
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