DMBT5551 Specs and Replacement

Type Designator: DMBT5551

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-23

 DMBT5551 Substitution

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DMBT5551 datasheet

 ..1. Size:128K  dc components

 dmbt5551.pdf pdf_icon

DMBT5551

DC COMPONENTS CO., LTD. DMBT5551 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .... See More ⇒

 9.1. Size:125K  dc components

 dmbt5401.pdf pdf_icon

DMBT5551

DC COMPONENTS CO., LTD. DMBT5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .... See More ⇒

Detailed specifications: DMBT2222, DMBT2222A, DMBT2907A, DMBT3904, DMBT3906, DMBT4401, DMBT4403, DMBT5401, MPSA42, DMBT8050, DMBT8550, DMBT9012, DMBT9013, DMBT9014, DMBT9018, DMBTA42, DMBTA44

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