All Transistors. DMC205E0 Datasheet

 

DMC205E0 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DMC205E0
   SMD Transistor Code: C8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1900 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT-457

 DMC205E0 Transistor Equivalent Substitute - Cross-Reference Search

   

DMC205E0 Datasheet (PDF)

 ..1. Size:456K  panasonic
dmc205e0.pdf

DMC205E0
DMC205E0

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter

 8.1. Size:555K  diodes
dmc2053uvt.pdf

DMC205E0
DMC205E0

DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4

 8.2. Size:446K  panasonic
dmc20501.pdf

DMC205E0
DMC205E0

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20501Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

 8.3. Size:453K  panasonic
dmc205c0.pdf

DMC205E0
DMC205E0

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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