All Transistors. DME50B01 Datasheet

 

DME50B01 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DME50B01
   SMD Transistor Code: A3
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SMINI5-F3-B

 DME50B01 Transistor Equivalent Substitute - Cross-Reference Search

   

DME50B01 Datasheet (PDF)

 ..1. Size:527K  panasonic
dme50b01.pdf

DME50B01 DME50B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME50B01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20B01 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B C

 9.1. Size:526K  panasonic
dme50101.pdf

DME50B01 DME50B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME50101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Co

 9.2. Size:517K  panasonic
dme50501.pdf

DME50B01 DME50B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME50501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20501 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B C

 9.3. Size:527K  panasonic
dme50c01.pdf

DME50B01 DME50B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME50C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20C01 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B C

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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