DXTD882 Specs and Replacement
Type Designator: DXTD882
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-89
DXTD882 Substitution
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DXTD882 datasheet
DC COMPONENTS CO., LTD. DXTD882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for the output stage of 0.75W audio, voltage regulator, and relay driver. SOT-89 .063(1.60) .066(1.70) Pinning .055(1.40) .059(1.50) 1 = Base 2 = Collector 3 = Emitter .102(2.60) .167(4.25) .095(2.40) .159(4.05) 1 2 3 Absolute Maximu... See More ⇒
Detailed specifications: DMG204B1, DXT13003DG, DXT13003DK, DXT13003EK, DXT2012P5, DXT2014P5, DXT5616U, DXT696BK, A733, DXTN26070CY, E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, ECH8503-TL-H, EML22, EMT18
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History: DXTN26070CY
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