DXTD882 Datasheet, Equivalent, Cross Reference Search
Type Designator: DXTD882
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-89
DXTD882 Transistor Equivalent Substitute - Cross-Reference Search
DXTD882 Datasheet (PDF)
1.1. dxtd882.pdf 
Size:87K _upd
DC COMPONENTS CO., LTD. DXTD882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for the output stage of 0.75W audio, voltage regulator, and relay driver. SOT-89 .063(1.60) .066(1.70) Pinning .055(1.40) .059(1.50) 1 = Base 2 = Collector 3 = Emitter .102(2.60) .167(4.25) .095(2.40) .159(4.05) 1 2 3 Absolute Maximu
Datasheet: DMG204B1 , DXT13003DG , DXT13003DK , DXT13003EK , DXT2012P5 , DXT2014P5 , DXT5616U , DXT696BK , 2N60C , DXTN26070CY , E13005-225 , E13005-250 , E13005D-213 , ECH8502-TL-H , ECH8503-TL-H , EML22 , EMT18 .
