LBC817-25DMT1G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

LBC817-25DMT1G Specs and Replacement

Type Designator: LBC817-25DMT1G

SMD Transistor Code: 6B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.37 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT-457

LBC817-25DMT1G Substitution

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LBC817-25DMT1G datasheet

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LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-25DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT... See More ⇒

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lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC... See More ⇒

4.2. Size:497K lrc

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