M54566DP Datasheet and Replacement

   Type Designator: M54566DP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: 16P2X-B
      - BJT Cross-Reference Search