All Transistors. MA42 Datasheet

 

MA42 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MA42
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO-92

 MA42 Transistor Equivalent Substitute - Cross-Reference Search

   

MA42 Datasheet (PDF)

 ..1. Size:288K  sipower
ma42.pdf

MA42
MA42

 0.1. Size:252K  fairchild semi
fdma420nz.pdf

MA42
MA42

August 2009FDMA420NZtmSingle N-Channel 2.5V Specified PowerTrench MOSFET20V, 5.7A, 30m General Description FeaturesThis Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7AFairchild Semiconductors advanced Power Trenchprocess to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0AMicroFET leadframe.

 0.2. Size:329K  analog power
ama421p.pdf

MA42
MA42

Analog Power AMA421PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = -4.5V -8.8 Low thermal impedance -2034 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

 0.3. Size:322K  analog power
ama420n.pdf

MA42
MA42

Analog Power AMA420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 4.5V15.0 Low thermal impedance 2011 @ VGS = 2.5V13.5 Fast switching speed DFN2X2 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA

 0.4. Size:336K  analog power
ama423p.pdf

MA42
MA42

Analog Power AMA423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)42 @ VGS = -4.5V -6.6 Low thermal impedance-20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-driveDFN2x2-8Typical Applications: Battery Powered Instruments Portable

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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