All Transistors. RT3A77M Datasheet

 

RT3A77M Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT3A77M
   SMD Transistor Code: A77
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363

 RT3A77M Transistor Equivalent Substitute - Cross-Reference Search

   

RT3A77M Datasheet (PDF)

 ..1. Size:121K  isahaya
 rt3a77m.pdf

RT3A77M RT3A77M

PRELIMINARY PRELIMINARY RT3A77M NoticeThis is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3A77M is compound transistor built with two 2.1 1.25 2SA2166 chips in SC-88 package. FEATURE High collector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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