RT3A77M Specs and Replacement
Type Designator: RT3A77M
SMD Transistor Code: A77
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363
RT3A77M Substitution
- BJT ⓘ Cross-Reference Search
RT3A77M datasheet
PRELIMINARY PRELIMINARY RT3A77M Notice This is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3A77M is compound transistor built with two 2.1 1.25 2SA2166 chips in SC-88 package. FEATURE High collector... See More ⇒
Detailed specifications: MBT2222ADW1T1G, MBT35200MT1G, MBT3904DW1T3G, MBT3906DW1T2G, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, S8050, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH, PBSS2540MB
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