PBSS4032PZ Specs and Replacement

Type Designator: PBSS4032PZ

SMD Transistor Code: PB4032PZ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 65 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT-223

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PBSS4032PZ datasheet

 ..1. Size:190K  philips

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PBSS4032PZ

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat... See More ⇒

 ..2. Size:191K  nxp

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PBSS4032PZ

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat... See More ⇒

 5.1. Size:182K  philips

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PBSS4032PZ

PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032ND. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc... See More ⇒

 5.2. Size:172K  philips

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PBSS4032PZ

PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw... See More ⇒

Detailed specifications: PBSS4021PX, PBSS4021PZ, PBSS4021SN, PBSS4021SP, PBSS4021SPN, PBSS4032NX, PBSS4032NZ, PBSS4032PX, A733, PBSS4032SN, PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX, PBSS4041PZ, PBSS4041SN

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