All Transistors. PBSS4130PANP Datasheet

 

PBSS4130PANP Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS4130PANP
   SMD Transistor Code: 2F
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT-1118

 PBSS4130PANP Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS4130PANP Datasheet (PDF)

 ..1. Size:337K  nxp
pbss4130panp.pdf

PBSS4130PANP
PBSS4130PANP

PBSS4130PANP30 V, 1 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collect

 3.1. Size:268K  nxp
pbss4130pan.pdf

PBSS4130PANP
PBSS4130PANP

PBSS4130PAN30 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collecto

 6.1. Size:49K  philips
pbss4130t.pdf

PBSS4130PANP
PBSS4130PANP

DISCRETE SEMICONDUCTORSDATA SHEETM3D088PBSS4130T30 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Nov 27Philips Semiconductors Product specification30 V, 1 APBSS4130TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and I

 6.2. Size:257K  nxp
pbss4130qa.pdf

PBSS4130PANP
PBSS4130PANP

PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5130QA.2. Features and benefits Very low collector-emitter

 6.3. Size:165K  nxp
pbss4130t.pdf

PBSS4130PANP
PBSS4130PANP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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