PBSS4160PAN Datasheet and Replacement
Type Designator: PBSS4160PAN
SMD Transistor Code: 2K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.45 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-1118
PBSS4160PAN Transistor Equivalent Substitute - Cross-Reference Search
PBSS4160PAN Datasheet (PDF)
pbss4160pan.pdf
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒
pbss4160pans.pdf
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒
pbss4160panp.pdf
PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒
pbss4160panps.pdf
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒
Datasheet: PBSS4041SN , PBSS4041SP , PBSS4041SPN , PBSS4112PAN , PBSS4112PANP , PBSS4130PAN , PBSS4130PANP , PBSS4130QA , 2SD313 , PBSS4160PANP , PBSS4160PANPS , PBSS4160PANS , PBSS4160QA , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X .
History: TN3962 | T2071 | T1903 | T1312 | 2SC4218 | T1866 | T1893
Keywords - PBSS4160PAN transistor datasheet
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History: TN3962 | T2071 | T1903 | T1312 | 2SC4218 | T1866 | T1893
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