All Transistors. PBSS4160PAN Datasheet

 

PBSS4160PAN Datasheet and Replacement


   Type Designator: PBSS4160PAN
   SMD Transistor Code: 2K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-1118
 

 PBSS4160PAN Substitution

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PBSS4160PAN Datasheet (PDF)

 ..1. Size:268K  nxp
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PBSS4160PAN

PBSS4160PAN60 V, 1 A NPN/NPN low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

 0.1. Size:280K  nxp
pbss4160pans.pdf pdf_icon

PBSS4160PAN

PBSS4160PANS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.2.

 0.2. Size:359K  nxp
pbss4160panp.pdf pdf_icon

PBSS4160PAN

PBSS4160PANP60 V, 1 A NPN/PNP low VCEsat (BISS) transistor14 January 2013 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.2. Features and benefits Very low collecto

 0.3. Size:327K  nxp
pbss4160panps.pdf pdf_icon

PBSS4160PAN

PBSS4160PANPS60 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 February 2015 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.2.

Datasheet: PBSS4041SN , PBSS4041SP , PBSS4041SPN , PBSS4112PAN , PBSS4112PANP , PBSS4130PAN , PBSS4130PANP , PBSS4130QA , BC558 , PBSS4160PANP , PBSS4160PANPS , PBSS4160PANS , PBSS4160QA , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X .

History: PBSS5120T | MT6L61AS | DMC5610N | NPS3903 | ME512 | 2SD1355O | 2SC917

Keywords - PBSS4160PAN transistor datasheet

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