PBSS4160PAN Datasheet. Specs and Replacement

Type Designator: PBSS4160PAN  📄📄 

SMD Transistor Code: 2K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT-1118

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PBSS4160PAN datasheet

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PBSS4160PAN

PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒

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PBSS4160PAN

PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒

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PBSS4160PAN

PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒

 0.3. Size:327K  nxp

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PBSS4160PAN

PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒

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Detailed specifications: PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN, PBSS4112PANP, PBSS4130PAN, PBSS4130PANP, PBSS4130QA, 2SD313, PBSS4160PANP, PBSS4160PANPS, PBSS4160PANS, PBSS4160QA, PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X

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