All Transistors. PBSS4160QA Datasheet

 

PBSS4160QA Datasheet and Replacement


   Type Designator: PBSS4160QA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 4.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT-1215
 

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PBSS4160QA Datasheet (PDF)

 ..1. Size:258K  nxp
pbss4160qa.pdf pdf_icon

PBSS4160QA

PBSS4160QA60 V, 1 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5160QA.2. Features and benefits Very low collector-emitter

 6.1. Size:207K  philips
pbss4160ds.pdf pdf_icon

PBSS4160QA

PBSS4160DS60 V, 1 A NPN/NPN low VCEsat (BISS) transistorRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.PNP/PNP complement: PBSS5160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High

 6.2. Size:341K  philips
pbss4160t.pdf pdf_icon

PBSS4160QA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS4160T60 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 May 12Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet60 V, 1 A PBSS4160TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

 6.3. Size:258K  philips
pbss4160dpn.pdf pdf_icon

PBSS4160QA

PBSS4160DPN60 V, 1 A NPN/PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC

Datasheet: PBSS4112PANP , PBSS4130PAN , PBSS4130PANP , PBSS4130QA , PBSS4160PAN , PBSS4160PANP , PBSS4160PANPS , PBSS4160PANS , D209L , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X , PBSS4240Z , PBSS4260PAN , PBSS4260PANP , PBSS4260QA .

History: GC269 | SN109 | RN2324A | BCP3904 | TBC848 | AFY38 | 2SD1354O

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