All Transistors. PBSS4230PANP Datasheet

 

PBSS4230PANP Datasheet and Replacement


   Type Designator: PBSS4230PANP
   SMD Transistor Code: 2J
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 13.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-1118
 

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PBSS4230PANP Datasheet (PDF)

 ..1. Size:338K  nxp
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PBSS4230PANP

PBSS4230PANP30 V, 2 A NPN/PNP low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

 3.1. Size:247K  nxp
pbss4230pan.pdf pdf_icon

PBSS4230PANP

PBSS4230PAN30 V, 2 A NPN/NPN low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

 6.1. Size:251K  philips
pbss4230t.pdf pdf_icon

PBSS4230PANP

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4230T30 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet30 V, 2 A PBSS4230TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

 6.2. Size:244K  nxp
pbss4230qa.pdf pdf_icon

PBSS4230PANP

PBSS4230QA30 V, 2 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5230QA.2. Features and benefits Very low collector-emitter

Datasheet: PBSS4130PANP , PBSS4130QA , PBSS4160PAN , PBSS4160PANP , PBSS4160PANPS , PBSS4160PANS , PBSS4160QA , PBSS4230PAN , TIP127 , PBSS4230QA , PBSS4240X , PBSS4240Z , PBSS4260PAN , PBSS4260PANP , PBSS4260QA , PBSS4330PAS , PBSS4360Z .

History: KT218E9 | LMBT3904TT3G | BF422S | BD951 | KT9141A | BFR62 | BCP68T3

Keywords - PBSS4230PANP transistor datasheet

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