KSD5079
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD5079
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70
W
Maximum Collector-Base Voltage |Vcb|: 1500
V
Maximum Collector-Emitter Voltage |Vce|: 800
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package:
TO-3PML
KSD5079
Transistor Equivalent Substitute - Cross-Reference Search
KSD5079
Datasheet (PDF)
8.1. Size:24K samsung
ksd5071pfc.pdf
NPN TRIPLE DIFFUSEDKSD5071 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTTO-3PFAPPLICATION (DAMPER DIODE BUILT IN) High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tf. max=0.4uS)ABSOLUTE MAXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector
8.2. Size:24K samsung
ksd5075pfc.pdf
NPN TRIPLE DIFFUSEDKSD5075 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTTO-3PFAPPLICATION (NO Damper Diode) High Collector-Base Voltage (VCBO=1500V) High Speed Switching (tf. max=0.4uS)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1500 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 6 V Collector Cur
8.3. Size:128K inchange semiconductor
ksd5070.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
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