VT6X1 Datasheet, Equivalent, Cross Reference Search
Type Designator: VT6X1
SMD Transistor Code: X1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: VMT6
VT6X1 Transistor Equivalent Substitute - Cross-Reference Search
VT6X1 Datasheet (PDF)
vt6x1.pdf
VT6X1 / EMX51DatasheetPower management (dual transistors)lOutlinelParameter Tr1 and Tr2 VMT6 EMT6VCEO20VIC200mA VT6X1 EMX51(SC-107C) lFeatures lInner circuitl l1) General Purpose.2) Two 2SCR522 chips in one package.3) Transister elements are indepe
vt6x12.pdf
Power management (dual transistors) VT6X12 Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
vt6x11.pdf
Power management (dual transistors) VT6X11 Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
