VT6X11 Datasheet, Equivalent, Cross Reference Search
Type Designator: VT6X11
SMD Transistor Code: X11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: VMT6
VT6X11 Transistor Equivalent Substitute - Cross-Reference Search
VT6X11 Datasheet (PDF)
vt6x11.pdf
Power management (dual transistors) VT6X11 Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
vt6x1.pdf
VT6X1 / EMX51DatasheetPower management (dual transistors)lOutlinelParameter Tr1 and Tr2 VMT6 EMT6VCEO20VIC200mA VT6X1 EMX51(SC-107C) lFeatures lInner circuitl l1) General Purpose.2) Two 2SCR522 chips in one package.3) Transister elements are indepe
vt6x12.pdf
Power management (dual transistors) VT6X12 Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
