UML6N Datasheet and Replacement
Type Designator: UML6N
SMD Transistor Code: L6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: SOT-353
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UML6N Datasheet (PDF)
uml6n.pdf

EML6 / UML6N Transistors General purpose transistor (isolated transistor and diode) EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter EMT5Motor driver 1.6 0.51.00.5 0.5 Features ( ) (4)51) Tr : Low VCE(sat) Di : Low VF ( ) ( ) ( )1 2 32) Small package 0.22 0
eml6 uml6n.pdf

EML6 / UML6N Transistors General purpose transistor (isolated transistor and diode) EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter EMT5Motor driver 1.6 0.51.00.5 0.5 Features ( ) (4)51) Tr : Low VCE(sat) Di : Low VF ( ) ( ) ( )1 2 32) Small package 0.22 0
uml6n.pdf

UML6N General purpose transistors (Isolated transistor and diode)FEATURES 2SC5585 and RB521S-30 chips in a package SOT-353 APPLICATIONS DC / DC converter Motor driver FEATURES 1 1) Tr : Low VCE(sat) Di : Low VF 2) Small package STRUCTURE Silicon epitaxial planar transistor Schottky barrier diode Marking: L6 Equivalent circuit Absolute maximum ratings (Ta=25
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB464 | KT646A | 2SA843 | 2SA1051A | 2N2699 | MMBT4122 | 2N1963
Keywords - UML6N transistor datasheet
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History: 2SB464 | KT646A | 2SA843 | 2SA1051A | 2N2699 | MMBT4122 | 2N1963



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