FH317 Datasheet, Equivalent, Cross Reference Search
Type Designator: FH317
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-3
FH317 Transistor Equivalent Substitute - Cross-Reference Search
FH317 Datasheet (PDF)
..1. Size:146K china
fh317.pdf
fh317.pdf
FH317 NPN B C D E F G PCM Tc=25 30 W ICM 5 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 50 75 100 125 150 175 V V(BR)CEO ICE=1mA 50 75 100 125 150 175 V ICBO VCB=VCBO 1.0 mA ICEO VCE=0.5 VCEO 1.5 mA VBEsat 3.0 IC=2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
