FHC050 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHC050
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-18
FHC050 Transistor Equivalent Substitute - Cross-Reference Search
FHC050 Datasheet (PDF)
..1. Size:107K china
fhc050.pdf
fhc050.pdf
FHC050 PNP PCM TA=25 500 mW IC 150 mA Tstg -55~175 VCEO IC1mA 50 V VEBO IE1mA 5.0 V ICEO VCE=0.5VCEO 0.5 mA VCEsat 1.5 V IC=100mA IB=0.4mA VEBsat 2.2 V VCE=3V hFE 500 IC=50mA 1. E 2. B 3. C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA275 | 2N922 | 2SB370A
