FHC11021 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHC11021
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO-3
FHC11021 Transistor Equivalent Substitute - Cross-Reference Search
FHC11021 Datasheet (PDF)
..1. Size:111K china
fhc11021.pdf
fhc11021.pdf
FHC11021(MJ11021) PNP PCM Tc=25 175 W ICM 20 A Tjm 175 Tstg -55~150 V(BR) CBO ICB=100mA 200 V V(BR) CEO ICB=100mA 150 V V(BR)EBO ICE=1mA 5.0 V ICBO VCB=125V 1.0 mA ICEO VCE=125V 1.0 mA 3.8 VBEsat IC=10A V IB=0.1A VCEsat 2.5 VCE=3V hFE 2000~
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDX10-6
