FHD075 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD075
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-3
FHD075 Transistor Equivalent Substitute - Cross-Reference Search
FHD075 Datasheet (PDF)
..1. Size:24K shaanxi
fhd075.pdf
fhd075.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD075NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
