FHD6058 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD6058
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO-3
FHD6058 Transistor Equivalent Substitute - Cross-Reference Search
FHD6058 Datasheet (PDF)
..1. Size:112K china
fhd6058.pdf
fhd6058.pdf
FHD6058(2N6058) NPN PCM Tc=25 150 W ICM 12 A Tstg -55~150 VCBO sus ICB100mA 80 V VCEO sus ICE100mA 80 V VEBO sus IEB100mA 5 V ICEO VCE=40V 1.0 mA IEBO VEB=5V 2.0 mA IC=12A VBEsat 4.0 IB=120mA V IC=6.0A
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
