DMC904F1 Datasheet, Equivalent, Cross Reference Search
Type Designator: DMC904F1
SMD Transistor Code: D4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT-563
DMC904F1 Transistor Equivalent Substitute - Cross-Reference Search
DMC904F1 Datasheet (PDF)
dmc904f1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC904F1Silicon NPN epitaxial planar typeFor high frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimension click
dmc904f0.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC904F0Silicon NPN epitaxial planar typeFor high frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count.Package dimension click
dmc90401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMC90401Silicon NPN epitaxial planar typeFor general amplificationDMC50401 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
