All Transistors. DME20101 Datasheet

 

DME20101 Datasheet and Replacement


   Type Designator: DME20101
   SMD Transistor Code: A2
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-753
 

 DME20101 Substitution

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DME20101 Datasheet (PDF)

 ..1. Size:517K  panasonic
 dme20101.pdf pdf_icon

DME20101

This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 7.1. Size:514K  panasonic
 dme20102.pdf pdf_icon

DME20101

This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.1. Size:518K  panasonic
 dme20c01.pdf pdf_icon

DME20101

This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.2. Size:586K  panasonic
 dme20501.pdf pdf_icon

DME20101

This product complies with the RoHS Directive (EU 2002/95/EC).DME20501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,

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Datasheet: FJB5555 , FJL6920 , DMA30401 , DMA90401 , DMC30401 , DMC90401 , DMC904F0 , DMC904F1 , 2SD882 , DME20102 , DME20501 , DME20B01 , DME20C01 , DMG21401 , DMG50401 , DMG90401 , DMMT2907A .

History: 2SC3181O | KRC852U | MP8621 | 2SC692 | FJV4106R

Keywords - DME20101 transistor datasheet

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