All Transistors. DMS935E2 Datasheet

 

DMS935E2 Datasheet and Replacement


   Type Designator: DMS935E2
   SMD Transistor Code: X1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-666
 

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DMS935E2 Datasheet (PDF)

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DMS935E2

DMS935E2Silicon NPN epitaxial planar type (Tr)Silicon epitaxial planar type (CCD load device)For CCD output circuits Unit: mmDSC2G03 + CCD load device (Individual) Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: X

 7.1. Size:704K  panasonic
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DMS935E2

DMS935E1Silicon NPN epitaxial planar type (Tr)Silicon epitaxial planar type (CCD load device)For CCD output circuits Unit: mmDSC2G03 + CCD load device (Individual) Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: X

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SA1037-Q | MP1551 | 2SB1037R | 9013D | 2SA89 | FC115 | CT1462

Keywords - DMS935E2 transistor datasheet

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