All Transistors. GSTM8050LT1 Datasheet

 

GSTM8050LT1 Datasheet and Replacement


   Type Designator: GSTM8050LT1
   SMD Transistor Code: 80P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
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GSTM8050LT1 Datasheet (PDF)

 ..1. Size:210K  globaltech semi
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GSTM8050LT1

GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 800mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P

 9.1. Size:503K  globaltech semi
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GSTM8050LT1

GSTM882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments SOT-89 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTM882F SOT-89 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AF267 | BUS22C | D38L5 | BUX11N | MMS8550 | 2N604A | UN9110S

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