All Transistors. LH8050PLT1G Datasheet

 

LH8050PLT1G Datasheet, Equivalent, Cross Reference Search

Type Designator: LH8050PLT1G

SMD Transistor Code: KEO

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

LH8050PLT1G Transistor Equivalent Substitute - Cross-Reference Search

 

LH8050PLT1G Datasheet (PDF)

0.1. lh8050plt1g.pdf Size:237K _lrc

LH8050PLT1G
LH8050PLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE High current capacity in compact package.SeriesIC =1.5A. Epitaxial planar type. NPN complement: LH80503 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PP

8.1. lh8050qlt1g.pdf Size:211K _lrc

LH8050PLT1G
LH8050PLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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