LS303 Specs and Replacement
Type Designator: LS303
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: SOIC-8
TO-71
TO-78
- BJT ⓘ Cross-Reference Search
LS303 datasheet
0.1. Size:372K international rectifier
irls3034pbf irlsl3034pbf.pdf 
PD -97364A IRLS3034PbF IRLSL3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic ... See More ⇒
0.2. Size:355K international rectifier
irls3036pbf irlsl3036pbf.pdf
PD -97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic ... See More ⇒
0.3. Size:325K international rectifier
irls3034-7ppbf.pdf
PD - 97362 IRLS3034-7PPbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.4m G ID (Silicon Limited) 380A c Benefits l Optimized for Logic Level Drive ID (Package Limited) ... See More ⇒
0.4. Size:307K international rectifier
irls3036-7ppbf.pdf
PD -97148A IRLS3036-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 1.9m l High Speed Power Switching G ID (Silicon Limited) 300A c l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Optimized for Logic Level ... See More ⇒
0.5. Size:288K international rectifier
auirls3036.pdf
AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ... See More ⇒
0.6. Size:688K infineon
auirls3036-7p.pdf
AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175 C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T... See More ⇒
0.7. Size:680K infineon
auirls3034.pdf
AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175 C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax ... See More ⇒
0.8. Size:699K infineon
auirls3034-7p.pdf
AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175 C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T... See More ⇒
0.9. Size:258K inchange semiconductor
irls3036.pdf
Isc N-Channel MOSFET Transistor IRLS3036 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
Detailed specifications: LMBT6429LT1G, LMBTA06UT1G, LMBTA06WT1G, LMBTA43LT1G, LMBTA56WT1G, LMSD1819A-RT1G, LS301, LS302, 2222A, LS310, LS311, LS312, LS313, LS3250A, LS3250B, LS3250C, LS350
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