Биполярный транзистор LS303 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LS303
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.005 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 2000
Корпус транзистора: SOIC-8 TO-71 TO-78
LS303 Datasheet (PDF)
ls303.pdf
LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN h 2000 @ 1.0A TYP. FELOW OUTPUT CAPACITANCE COBO 2.0pF TIGHT V MATCHING IV I=0.2mV TYP. BE BE1-VBE2HIGH fT 100 MHz ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 C (unless otherwise stated) I Collector Current 5mA C Maximum Temperatures Storage Temperature -55 to +150
irls3034pbf irlsl3034pbf.pdf
PD -97364AIRLS3034PbFIRLSL3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
irls3034-7ppbf.pdf
PD - 97362IRLS3034-7PPbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.0ml High Speed Power Switchingl Hard Switched and High Frequency Circuitsmax. 1.4mGID (Silicon Limited)380AcBenefitsl Optimized for Logic Level Drive ID (Package Limited)
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
auirls3036.pdf
AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
irls3036pbf irlsl3036pbf.pdf
PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic
auirls3036-7p.pdf
AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T
auirls3034.pdf
AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax
irls3036-7ppbf.pdf
PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level
auirls3034-7p.pdf
AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T
irls3036.pdf
Isc N-Channel MOSFET Transistor IRLS3036FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ