LS303 - Даташиты. Аналоги. Основные параметры

PD -97364A IRLS3034PbF IRLSL3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic

PD -97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic

PD - 97362 IRLS3034-7PPbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.4m G ID (Silicon Limited) 380A c Benefits l Optimized for Logic Level Drive ID (Package Limited)

PD -97148A IRLS3036-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 1.9m l High Speed Power Switching G ID (Silicon Limited) 300A c l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Optimized for Logic Level

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175 C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175 C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175 C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

Isc N-Channel MOSFET Transistor IRLS3036 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt