LS352 Datasheet and Replacement
Type Designator: LS352
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT-26 TO-71 TO-78
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LS352 Datasheet (PDF)
..1. Size:237K linear-systems
ls352.pdf
ls352.pdf
LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN h 200 @ 10A - 1mA FETIGHT V MATCHING IV I=0.2mV TYP. BE BE1-VBE2HIGH f 275 MHz TYP. @ 1mA TABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55 to +150C Operating Junction Temperature +150C Top View
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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