LS3550B Datasheet, Equivalent, Cross Reference Search

   Type Designator: LS3550B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-23-6

LS3550B Transistor Equivalent Substitute - Cross-Reference Search

LS3550B Datasheet (PDF)

..1. Size:149K linear-systems
ls3550b.pdf

LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* * SOT-23TIGHT MATCHING1 2mV TOP VIEWEXCELLENT THERMAL TRACKING1 3V/C 1 6B1 C1ABSOLUTE MAXIMUM RATINGS2 2 5E2 E1@ 25 C (unless otherwise stated) 3 4B2 C2Maximum Temperatures Storage Temperature -55 to +150 C Operating Junction Temperature -55 to +150 C Max

8.1. Size:149K linear-systems
ls3550c.pdf