LSBTH10T1G Specs and Replacement
Type Designator: LSBTH10T1G
SMD Transistor Code: H8A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SC-74
LSBTH10T1G Substitution
- BJT ⓘ Cross-Reference Search
LSBTH10T1G datasheet
LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 LSBTH10T1G Qualified and PPAP Capable. S-LSBTH10T1G Ordering Information Device Marking Shipping LSBTH10T1G 3000/Tape&Reel H8A S-LSBTH10T1G LSBTH10T3G 10000/Tape&Reel H8A S-LSBTH10T3G MAX... See More ⇒
Detailed specifications: LS3250C, LS350, LS351, LS352, LS3550A, LS3550B, LS3550C, LS358, 2N2907, LSSBTH10T1G, M28S-B, M28S-C, M28S-D, MIMD10A, MJ11012G, MJ11015G, MJ11016G
Keywords - LSBTH10T1G pdf specs
LSBTH10T1G cross reference
LSBTH10T1G equivalent finder
LSBTH10T1G pdf lookup
LSBTH10T1G substitution
LSBTH10T1G replacement

