All Transistors. LSBTH10T1G Datasheet

 

LSBTH10T1G Datasheet and Replacement


   Type Designator: LSBTH10T1G
   SMD Transistor Code: H8A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC-74
 

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LSBTH10T1G Datasheet (PDF)

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LSBTH10T1G

LESHAN RADIO COMPANY, LTD.VHF/UHF Transistors Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 LSBTH10T1GQualified and PPAP Capable.S-LSBTH10T1GOrdering InformationDevice Marking ShippingLSBTH10T1G3000/Tape&ReelH8AS-LSBTH10T1GLSBTH10T3G10000/Tape&ReelH8AS-LSBTH10T3GMAX

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5338X

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