LSBTH10T1G PDF and Equivalents Search

 

LSBTH10T1G Specs and Replacement

Type Designator: LSBTH10T1G

SMD Transistor Code: H8A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SC-74

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LSBTH10T1G datasheet

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LSBTH10T1G

LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 LSBTH10T1G Qualified and PPAP Capable. S-LSBTH10T1G Ordering Information Device Marking Shipping LSBTH10T1G 3000/Tape&Reel H8A S-LSBTH10T1G LSBTH10T3G 10000/Tape&Reel H8A S-LSBTH10T3G MAX... See More ⇒

Detailed specifications: LS3250C, LS350, LS351, LS352, LS3550A, LS3550B, LS3550C, LS358, 2N2907, LSSBTH10T1G, M28S-B, M28S-C, M28S-D, MIMD10A, MJ11012G, MJ11015G, MJ11016G

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