All Transistors. LSBTH10T1G Datasheet

 

LSBTH10T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LSBTH10T1G
   SMD Transistor Code: H8A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC-74

 LSBTH10T1G Transistor Equivalent Substitute - Cross-Reference Search

   

LSBTH10T1G Datasheet (PDF)

 ..1. Size:555K  lrc
 lsbth10t1g.pdf

LSBTH10T1G LSBTH10T1G

LESHAN RADIO COMPANY, LTD.VHF/UHF Transistors Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 LSBTH10T1GQualified and PPAP Capable.S-LSBTH10T1GOrdering InformationDevice Marking ShippingLSBTH10T1G3000/Tape&ReelH8AS-LSBTH10T1GLSBTH10T3G10000/Tape&ReelH8AS-LSBTH10T3GMAX

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1201R

 

 
Back to Top