MJ3055 Datasheet. Specs and Replacement
Type Designator: MJ3055 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 10 A
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
MJ3055 Substitution
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MJ3055 datasheet
MJ3055 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
isc Silicon NPN Power Transistor MJ3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: MJ15024G, MJ15025G, MJ16018-1400V, MJ21193G, MJ21194G, MJ21195G, MJ21196G, MJ2955G, 2SA1943, MJ4502G, MJ802G, MJ8100R, MJB41CG, MJB41CT4G, MJB42CT4G, MJB44H11G, MJB44H11T4
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