All Transistors. MJ3055 Datasheet

 

MJ3055 Datasheet and Replacement


   Type Designator: MJ3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 10 A
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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MJ3055 Datasheet (PDF)

 ..1. Size:11K  semelab
 mj3055.pdf pdf_icon

MJ3055

MJ3055Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 ..2. Size:206K  inchange semiconductor
 mj3055.pdf pdf_icon

MJ3055

isc Silicon NPN Power Transistor MJ3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RAT

Datasheet: MJ15024G , MJ15025G , MJ16018-1400V , MJ21193G , MJ21194G , MJ21195G , MJ21196G , MJ2955G , BC337 , MJ4502G , MJ802G , MJ8100R , MJB41CG , MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 .

History: MJD210T4G | BC141D | 2SD362

Keywords - MJ3055 transistor datasheet

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