MJD148T4G Datasheet. Specs and Replacement
Type Designator: MJD148T4G
SMD Transistor Code: J148G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-252
MJD148T4G Substitution
- BJT ⓘ Cross-Reference Search
MJD148T4G datasheet
MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @... See More ⇒
MJD148 NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features POWER TRANSISTOR High Gain 4.0 AMPERES Low Saturation Voltage 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product COLLECTOR Epoxy Meets UL 94 V-0 @ 0.125 in 2, 4 NJV Prefix for Autom... See More ⇒
MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 45 V VCBO Collector Base Voltage 45 V Emitter Base Volta... See More ⇒
Detailed specifications: MJD117-1G, MJD117G, MJD117T4G, MJD122G, MJD122T4G, MJD127G, MJD127T4G, MJD128T4G, A940, MJD200G, MJD200RLG, MJD200T4G, MJD210G, MJD210RLG, MJD210T4G, MJD243G, MJD243T4G
Keywords - MJD148T4G pdf specs
MJD148T4G cross reference
MJD148T4G equivalent finder
MJD148T4G pdf lookup
MJD148T4G substitution
MJD148T4G replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370 | 4508nh mosfet | a94 transistor | c5149 datasheet




