All Transistors. MJD31CT4G Datasheet

 

MJD31CT4G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJD31CT4G
   SMD Transistor Code: J31CG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-252

 MJD31CT4G Transistor Equivalent Substitute - Cross-Reference Search

   

MJD31CT4G Datasheet (PDF)

 ..1. Size:176K  onsemi
mjd31ct4g.pdf

MJD31CT4G
MJD31CT4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

 0.1. Size:135K  onsemi
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

MJD31CT4G
MJD31CT4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 0.2. Size:132K  onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

MJD31CT4G
MJD31CT4G

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

 6.1. Size:401K  st
mjd31ct4-a.pdf

MJD31CT4G
MJD31CT4G

MJD31CT4-ALow voltage NPN power transistorDatasheet - production dataFeatures This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel3 Complementary to the PNP type MJD32C1ApplicationDPAK General purpose linear and switching TO-252equipmentDescriptionFigure 1. Internal schematic diagramThe dev

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N5847 | D60T7060

 

 
Back to Top