All Transistors. MJD50G Datasheet

 

MJD50G Datasheet and Replacement


   Type Designator: MJD50G
   SMD Transistor Code: J50G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-252
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MJD50G Datasheet (PDF)

 ..1. Size:159K  onsemi
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MJD50G

MJD47, NJVMJD47T4G,MJD50High Voltage PowerTransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)1 AMPERE Electrically Similar to Popular

 9.1. Size:184K  motorola
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MJD50G

Order this documentMOTOROLAby MJD47/DSEMICONDUCTOR TECHNICAL DATAMJD47*MJD50*High Voltage Power Transistors*Motorola Preferred DeviceDPAK For Surface Mount ApplicationsNPN SILICONDesigned for line operated audio output amplifier, switchmode power supply driversPOWER TRANSISTORSand other switching applications.1 AMPERE Lead Formed for Surface Mount Applications in

 9.2. Size:98K  st
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MJD50G

MJD50HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) ELECTRICAL SIMILAR TO TIP503APPLICATIONS SWITCH MODE POWER SUPPLIES1 AUDIO AMPLIFIERS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix T4)DESCRIPTIONThe MJD50

 9.3. Size:44K  fairchild semi
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MJD50G

MJD47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | BDY12B | ED1602D | BDS16SMD05 | KT208I | DRC9143X | SFE245

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