MMBT2907A-G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MMBT2907A-G Specs and Replacement

   Type Designator: MMBT2907A-G
   SMD Transistor Code: 2F
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

Electrical Characteristics

   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

MMBT2907A-G Substitution

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MMBT2907A-G datasheet

..1. Size:143K comchip
mmbt2907a-g.pdf pdf_icon

General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.... See More ⇒

4.1. Size:307K panjit
mmbt2907a-au.pdf pdf_icon

MMBT2907A-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 60 Volt FEATURES PNP epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) ... See More ⇒

4.2. Size:4000K msksemi
mmbt2907a-ms.pdf pdf_icon

www.msksemi.com MMBT2907A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A- MS) 1. BASE Marking 2F 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter ... See More ⇒

4.3. Size:929K cn salltech
mmbt2907a-l mmbt2907a-h.pdf pdf_icon