MMBT2907AWT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT2907AWT1G
SMD Transistor Code: 20
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-323
MMBT2907AWT1G Transistor Equivalent Substitute - Cross-Reference Search
MMBT2907AWT1G Datasheet (PDF)
mmbt2907awt1g nsvmmbt2907awt1g.pdf
MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requ
mmbt2907awt1g.pdf
MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re
nsvmmbt2907awt1g.pdf
MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re
mmbt2907awt1rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907AWT1/DPreliminary InformationMMBT2907AWT1General Purpose TransistorPNP SiliconMotorola Preferred DeviceThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT323/SC70 packagewhich is designed for low power surface mount applications.COLLECTOR3311
mmbt2907awt1-d.pdf
MMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symb
mmbt2907awt1.pdf
FM120-M WILLASTHRUMMBT2907AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order t
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: FJAF6806D | 2SC1684 | 2S012
