All Transistors. MMBT3906-G Datasheet

 

MMBT3906-G Datasheet and Replacement


   Type Designator: MMBT3906-G
   SMD Transistor Code: 2A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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MMBT3906-G Datasheet (PDF)

 ..1. Size:124K  comchip
 mmbt3906-g.pdf pdf_icon

MMBT3906-G

General Purpose TransistorMMBT3906-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN30.056 (1.40)transistor MMBT3904-G is recommended0.047 (1.20)1 2Collector0.079 (2.00)0.006 (0.15)30.003 (0.08)0.071 (1.80)0.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base0.004 (0.10) m

 5.1. Size:1186K  kexin
 mmbt3906-d.pdf pdf_icon

MMBT3906-G

SMD Type TransistorsPNP Transistors(KMBT3906-D)MMBT3906-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2 Complementary to MMBT3904-D +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Marking: 2A1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage

 5.2. Size:147K  comchip
 mmbt3906-hf.pdf pdf_icon

MMBT3906-G

General Purpose TransistorMMBT3906-HF (PNP)RoHS DeviceHalogen FreeFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN3transistor MMBT3906-HF is recommended0.056 (1.40)0.047 (1.20)1 20.079 (2.00)0.006 (0.15)Collector0.003 (0.08)0.071 (1.80)30.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base

 5.3. Size:4190K  msksemi
 mmbt3906-ms.pdf pdf_icon

MMBT3906-G

www.msksemi.comMMBT3906-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES As complementary type, the NPN transistor MMBT3904-MS is Recommended Epitaxial planar die construction 1. BASE2. EMITTERMARKING: 2ASOT23 3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V

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Datasheet: MMBT3904SL , MMBT3904TT1G , MMBT3904WG , MMBT3904WGH , MMBT3904WT1G , MMBT3904ZW , MMBT3906FA , MMBT3906FZ , 2SD313 , MMBT3906-HF , MMBT3906LT1G , MMBT3906LTG , MMBT3906SL , MMBT3906TT1G , MMBT3906WG , MMBT3906WGH , MMBT3906WT1G .

History: GES3396 | GT362B | HBNP5213G6 | 2SD1165A | 2SC4976 | GT250-7C | BFT37A

Keywords - MMBT3906-G transistor datasheet

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