MMBT4403-G Datasheet and Replacement

GeneraI Purpose TransistorsSMD Diodes SpeciaIistMMBT4403-G (PNP)RoHS DeviceSOT-23Features0.119(3.00) -Switching transistor.0.110(2.80)30.056(1.40)0.047(1.20)Marking: 2T1 20.006(0.15)0.083(2.10)0.002(0.05)Collector0.066(1.70)30.044(1.10) 0.103(2.60)0.035(0.90) 0.086(2.20)10.006(0.15) maxBase0.020(0.50)0.007(0.20) min0.013(0.35)2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4403LT1/DSwitching TransistorMMBT4403LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 40 VdcSOT23 (TO236AB)EmitterBase Voltage V

November 2006MMBT4403KtmPNP Epitaxial Silicon TransistorSwitching TransistorMarking32TK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dis

2N4403 MMBT4403CEC TO-92BSOT-23BEMark: 2TPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage40VVEBO Emitter-Base Voltage 5.0

MMBT4403T PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Type Available (MMBT4401T) Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-S

MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type Available (MMBT4401) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound Totally Lead-Free & Fully RoHS compliant (Notes

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Operating and Storage Junction Temperatures: -55 to 150 Capable of 350mWatts of Power DissipationPNP General Surface Mount SOT-23 Package Ic=-600mA Purpose Amplifier Lead Free Finish/RoHS Compli

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MMBT4403M3T5GPNP Switching TransistorThe MMBT4403M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO --40 Vdc3Collector -- Base

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Em

MMBT4403LT1GSwitching TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous I

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MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

MMBT4403M3T5GPNP Switching TransistorThe MMBT4403M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 Vdc3Collector-Base Voltage

UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4403 is designed for use as a general purpose SOT-23amplifier and switch requiring collector currents up to 500mA. 312SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MMBT440

MMBT4403WPNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA SOT-323LDim Min MaxCOLLECTORA 1.800 2.2003STop ViewBB 1.150 1.3503C 0.800 1.0001BASED 0.300 0.400V G1G 1.200 1.40022H 0.000 0.100CEMITTERJ 0.100 0.250HJDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symb

MMBT4403PNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040COLLECTOR AL3 B 1.200 1.400C 0.890 1.11031D 0.370 0.500Top View SBBASE 1 2G 1.780 2.0403H 0.013 0.100V G21J 0.085 0.177EMITTER2K 0.450 0.600CL 0.890 1.020HJDS 2.100 2.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base V

Zowie Technology CorporationSwitching TransistorPNP SiliconLead free productHalogen-free type33COLLECTOR11BASEMMBT4403GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO - 40 VdcCollector-Base Voltage VCBO - 40 VdcEmitter-Base Voltage VEBO - 5.0 VdcCollector Current-Continuous IC - 600 mAdcTHERMAL CHARACTERISTICSCh

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4403MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-

MMBT4403 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4403=2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Contin

MMBT4403COLLECTOR3Switching Transistor PNP Silicon311BASE2SOT-232EMITTERM aximum R atingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1

FM120-MWILLASTHRUMMBT4403WT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures BatcPNP etteh process design, excellent power dissipation offersSilicon b r reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

FM120-M WILLASMMBT4403LT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersPNP Silicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order t

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorMARKING MMBT4403=2TMARKING MMBT4403=2TMARKING MMBT4403=2TMARKING MMBT4403=2TSOT-23MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise not

MMBT4403 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 500mACollector currents up to 500 mA. / Applications General purpose amplifier and switch requiring. / Eq

MMBT4403 PNP Silicon General Purpose Transistor . TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA

SMD Type orSMD Type TransistICsPNP Transistors MMBT4403W (KMBT4403W)FeaturesSwitching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO -40 VCollector-base voltage VCBO -40 VEmitter-base voltage VEBO -5 V

SMD Type TransistorsPNP Transistors MMBT4403 (KMBT4403)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ideal for Medium Power Amplification and Switching Complementary NPN Type Available (MMBT4401)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColl

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mWFEATURES 0.120(3.04)0.110(2.80)PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40)Complimentary (NPN) device: MMBT4401 0.047(1.20) Lead free in compliance with EU RoHS 2011/65/EU directive 0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.0

Product specification PNP General Purpose Transistor MMBT4403 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT4401). Also available in lead free version. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORM

RUMW UMW MMBT4403SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER VCBO Collector-Base Voltage -40 V 3. COLLECTOR VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBT4403SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )SOT- 23Features Switching Transistor Marking: 2TSymbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEOV Emitter-Base Voltage V EBO -5 CI Collector Current -600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Juncti

MMBT4403PNP Silicon Epitaxial Planar TransistorFEATURES Epitaxial planar die construction Complementary NPN product available - MMBT4401 MSL Class 1 compatible APPLICATIONS General purpose in desktop & handheld systems Ideal for medium-power signal amplification and switching SOT-23 MAXIMUM RATING (@ T = 25 unless otherwise specified)AParameter Sym

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

Jingdao Microelectronics co.LTD MMBT4403MMBT4403SOT-23PNP TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -40 V2.EMITTERCollectorEmitter Voltage VCEO -40 V3.COLLECTOREmitterBase Voltage VEBO -

MMBT4403 SOT-23 PNP Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary NPN Type Available (MMBT4401)2.Emitter1 3.Collector Simplified outline(SOT-23) Marking Marking2T Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -40 VCollector-emitter voltage VCEO -4

MMBT4403 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4401 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICColle

MMBT3904MMBT4403AO3400SI2305MMBT4403 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type AvailableSOT-23 (MMBT4401) Ideal for Medium Power Amplification andSwitching1BASE 2EMITTER MARKING2T 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCE

RoHS RoHSCOMPLIANT COMPLIANTMMBT4403 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2T Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -40Collector

MMBT4403 MMBT4403 SOT-23 Plastic-Encapsulate Switching Transistors (PNP) General description SOT-23 Plastic-Encapsulate Switching Transistors (PNP) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Marking:2T Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temper

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4403 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-Collector-Base VoltageVCBO -40 Vdc-Emitter-Base VoltageVEBO-5.0 Vdc-

MMBT4403PNP TRANSISTORFEATURES Switching Transistor AMDe ea CEL1LHE1.BASE2.EMITTER3.COLLECTORSOT-23 mechanical dataUNIT A C D E HE e M L L1 aMarkingmax1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.00.55 0.36mm(ref) (ref)min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15Type number Marking codemax43 6 55 118 102 20 77 0.022 14 MMBT4403 2Tmil(ref) (ref)min

MMBT4403BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT4401 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitVCBOCollector

Features SOT-23 Dim Min MaxA0.37 0.51 B1.20 1.40 C 2.30 2.50 D0.89 1.03E0.45 0.60 Maximum Ratings @ T = 25