MMBTH10-4LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTH10-4LT1G
SMD Transistor Code: 3E4.
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.004 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-23
MMBTH10-4LT1G Transistor Equivalent Substitute - Cross-Reference Search
MMBTH10-4LT1G Datasheet (PDF)
mmbth10-4lt1g.pdf
MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*
mmbth10lt1 mmbth10-4lt1.pdf
MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf
MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf
MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
