RT3XBBM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3XBBM
SMD Transistor Code: XBB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SOT-363
RT3XBBM Transistor Equivalent Substitute - Cross-Reference Search
RT3XBBM Datasheet (PDF)
1.1. rt3xbbm.pdf 
Size:182K _upd
RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor ( R1=10 kΩ) ●Mini package for easy mounting APPLICATION muting circuit、switching circuit ⑥ ⑤ ④ ⑥ ⑤ ④ ⑥ ⑤ ④ ⑤ ④ TERMINAL CONNECT
Datasheet: RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , RT2C00M , RT3W77M , RT3WLMM , 2SC945 , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A , S1015 , S1815 .
