RT3XBBM Specs and Replacement
Type Designator: RT3XBBM
SMD Transistor Code: XBB
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 820
Package: SOT-363
RT3XBBM Substitution
- BJT ⓘ Cross-Reference Search
RT3XBBM datasheet
RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor FEATURE Built-in bias resistor ( R1=10 k ) Mini package for easy mounting APPLICATION muting circuit switching circuit TERMINAL CONNECT... See More ⇒
Detailed specifications: RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , RT2C00M , RT3W77M , RT3WLMM , BD140 , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A , S1015 , S1815 .
History: RN49A4FE
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