RT3YB7M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3YB7M
SMD Transistor Code: YB7
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 9 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SOT-363
RT3YB7M Transistor Equivalent Substitute - Cross-Reference Search
RT3YB7M Datasheet (PDF)
1.1. rt3yb7m.pdf 
Size:155K _upd
RT3YB7M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING Unit：mm RT3YB7M is a composite transistor built with RT1P140 and two muting transistor with resistor in SC-88 package. FEATURE ・RT3Y97M is built in RTr1 side RT1P140,and RTr2,RTr3 side composite muting transistor with resistor. ・Built-in bias resistor RTr1:R1=10kΩ RTr2,RTr3:R1=10kΩ ãƒ
Datasheet: RT1C3904-T112 , RT2A00AM1 , RT2C00M , RT3W77M , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , 2N5551 , RTE13LFM , RXT2222A , RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G .
