All Transistors. CHDTC363TKGP Datasheet

 

CHDTC363TKGP Datasheet, Equivalent, Cross Reference Search


   Type Designator: CHDTC363TKGP
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 6.8 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

 CHDTC363TKGP Transistor Equivalent Substitute - Cross-Reference Search

   

CHDTC363TKGP Datasheet (PDF)

 ..1. Size:92K  chenmko
chdtc363tkgp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 6.1. Size:139K  chenmko
chdtc363ekgp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.2. Size:138K  chenmko
chdtc363eugp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 8.1. Size:90K  chenmko
chdtc314tkgp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.2. Size:72K  chenmko
chdtc323tkgp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC323TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.3. Size:76K  chenmko
chdtc323tugp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC323TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I

 8.4. Size:95K  chenmko
chdtc314tugp.pdf

CHDTC363TKGP CHDTC363TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC314TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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