CHDTC363TKGP
Datasheet, Equivalent, Cross Reference Search
Type Designator: CHDTC363TKGP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 6.8 kOhm
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 15
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.6
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT-23
CHDTC363TKGP
Transistor Equivalent Substitute - Cross-Reference Search
CHDTC363TKGP
Datasheet (PDF)
..1. Size:92K chenmko
chdtc363tkgp.pdf 
CHENMKO ENTERPRISE CO.,LTDCHDTC363TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
6.1. Size:139K chenmko
chdtc363ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC363EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi
6.2. Size:138K chenmko
chdtc363eugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC363EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation
8.1. Size:90K chenmko
chdtc314tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
8.2. Size:72K chenmko
chdtc323tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC323TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
8.3. Size:76K chenmko
chdtc323tugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC323TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I
8.4. Size:95K chenmko
chdtc314tugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I
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