2S30 Specs and Replacement
Type Designator: 2S30
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.035 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO1
2S30 Substitution
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2S30 datasheet
2S306A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPN Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 6V 5.08 (0.200) IC = 0.1A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b... See More ⇒
Detailed specifications: 2S190 , 2S191 , 2S192 , 2S193 , 2S24 , 2S25 , 2S26 , 2S26A , C3198 , 2S301 , 2S3010 , 2S301A , 2S302 , 2S3020 , 2S3021 , 2S302A , 2S303 .
Keywords - 2S30 pdf specs
2S30 cross reference
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