2S30 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2S30
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.035 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO1
2S30 Transistor Equivalent Substitute - Cross-Reference Search
2S30 Datasheet (PDF)
2s306a.pdf
2S306ADimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 6V 5.08 (0.200)IC = 0.1A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can b
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .